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Doping-dependence of nodal quasiparticle properties in high-$T_{ m c}$ cuprates studied by laser-excited angle-resolved photoemission spectroscopy

机译:在高$ T _ {\ rm c} $中,节点准粒子特性的掺杂依赖性   通过激光激发角分辨光电子能谱研究铜酸盐

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摘要

We investigate the doping dependent low energy, low temperature ($T$ = 5 K)properties of nodal quasiparticles in the d-wave superconductorBi$_{2.1}$Sr$_{1.9}$CaCu$_2$O$_{8+\delta}$ (Bi2212). By utilizing ultrahighresolution laser-excited angle-resolved photoemission spectroscopy, we obtainprecise band dispersions near $E_{F}$, mean free paths and scattering rates($\Gamma$) of quasiparticles. For optimally and overdoped, we obtain very sharpquasiparticle peaks of 8 meV and 6 meV full-width at half-maximum,respectively, in accord with terahertz conductivity. For all doping levels, wefind the energy-dependence of $\Gamma \sim |\omega |$, while $\Gamma$($\omega=0$) shows a monotonic increase from overdoping to underdoping. The dopingdependence suggests the role of electronic inhomogeneity on the nodalquasiparticle scattering at low temperature (5 K $\lsim 0.07T_{\rm c}$),pronounced in the underdoped region.
机译:我们研究了d波超导体中节点准粒子的掺杂依赖性低能,低温($ T $ = 5 K)特性Bi $ _ {2.1} $ Sr $ _ {1.9} $ CaCu $ _2 $ O $ _ {8 + \ delta} $(Bi2212)。通过利用超高分辨率激光激发角分辨光发射光谱,我们获得了接近$ E_ {F} $的精确色散,准自由程的平均自由程和散射速率($ \ Gamma $)。对于最佳和超掺杂,我们根据太赫兹电导率分别获得了非常尖锐的准峰,半峰分别为8 meV和6 meV。对于所有掺杂水平,我们确定了$ \ Gamma \ sim | \ omega | $的能量依赖性,而$ \ Gamma $($ \ omega = 0 $)显示了从过量掺杂到掺杂不足的单调增加。掺杂依赖性表明电子不均匀性在低温(5 K $ \ lsim 0.07T _ {\ rm c} $)下在结点准粒子散射中的作用,该现象在低掺杂区存在。

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